This study presents the comprehensive characterization of rectifying Schottky diodes by current-voltage and impedance measurements, with the prime objective to analyze the bias and temperature dependence of impedance spectra of the fabricated diodes. For that, the impedance of the Ni/p-Si/Al Schottky diodes has been measured at various forward and reverse bias varied from +1.2 to −5.0 V, the frequency range of 1 kHz–10 MHz and in a wide temperature range of 290–100 K. In the measured bias, frequency and temperature range impedance spectra of the diode i.e. Nyquist or Cole-Cole plots follow the Debye type model with a single characteristic frequency which provides more insight into the Ni/p-Si interface. The interface or junction resistance of Ni/p-Si shows a negative temperature coefficient and peaking like behavior with bias which reveals the presence of space charge limited current conduction mechanism in the diode. While using interface capacitance of Ni/p-Si, the built-in potential ($V_{bi}$) was estimated to be 0.49 eV using the Mott-Schottky plot for the fabricated diodes. From the temperature dependent impedance characteristics of Ni/p-Si/Al Schottky diode, the dynamics of the relaxation time was studied using Arrhenius relation, and energy related to the charge carriers hopping was estimated.

这项研究提出了通过电流-电压和阻抗测量对整流肖特基二极管的全面表征，其主要目的是分析所制造二极管的阻抗谱的偏置和温度依赖性。为此，已经在各种正向和反向偏置（从+1.2到-5.0 V），1 kHz-10 MHz的频率范围以及宽温度范围内测量了Ni / p-Si / Al肖特基二极管的阻抗。 290–100K。在测得的偏置，频率和温度范围内，二极管的阻抗谱即Nyquist或Cole-Cole图遵循具有唯一特征频率的Debye型模型，从而可以更深入地了解Ni / p-Si界面。Ni / p-Si的界面电阻或结电阻显示出负温度系数，并带有偏压的峰状行为，这表明二极管中存在空间电荷受限的电流传导机制。使用Ni / p-Si的界面电容时，内置电势（$V_{b\mathrm{一世}}$使用制造的二极管的Mott-Schottky曲线估计）为0.49 eV。从Ni / p-Si / Al肖特基二极管的温度相关阻抗特性出发，使用阿伦尼乌斯（Arrhenius）关系研究了弛豫时间的动力学，并估算了与电荷载流子跳跃相关的能量。