Abstract Spin controlled diluted magnetic semiconductors (DMSs) could bring revolution in the processing speed as well as in enhancing the storage capacity. To achieve its industrial application, several impurities have been doped from the 3d/4f into semiconductors, however, Cr has not yet been doped into CdS 1D nanostructures. Here, in the present study, we report on the Cr-doped CdS 1D nanoneedles synthesized by CVD and studied its optical and magnetic properties. The successful incorporation of Cr-ions into CdS confirmed by EDX and XRD. Along with the increase in Cr-ions concentration, first PL-peak shifted from 514.1 to 558.3 nm associated with the formation of excitonic magnetic polarons (EMPs) and the second peak centered at 993.8 nm may correspond to the aggregation of Cr-ions. For the first time, we tuned CdS emission up to ~ 482 nm covering visible spectral region up to near-infrared (NIR) region. With increasing the Cr-ions concentration up to 6.2%, saturation magnetization (Ms) was significantly enhanced from 0.614 × 10−3 Am2/kg to 0.987 × 10−3 Am2/kg. These findings will promote their future applications in the optoelectronic and spintronic devices.

中文翻译：

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Cr(II) 离子的取代位点对用于光电和自旋电子应用的一维 CdS 半导体纳米针的光学和磁性的影响

摘要 自旋控制的稀磁半导体（DMS）可以带来处理速度和存储容量的革命。为了实现其工业应用，已经将几种杂质从 3d/4f 掺杂到半导体中，但是，Cr 尚未掺杂到 CdS 1D 纳米结构中。在这里，在本研究中，我们报告了通过 CVD 合成的 Cr 掺杂的 CdS 1D 纳米针并研究了其光学和磁性。EDX 和 XRD 证实了 Cr 离子成功掺入到 CdS 中。随着 Cr 离子浓度的增加，第一个 PL 峰从 514.1 移至 558.3 nm，与激子磁极化子 (EMP) 的形成相关，第二个峰位于 993.8 nm，可能对应于 Cr 离子的聚集。首次，我们将 CdS 发射调至高达 ~ 482 nm，覆盖可见光谱区域至近红外 (NIR) 区域。随着 Cr 离子浓度增加到 6.2%，饱和磁化强度 (Ms) 从 0.614 × 10-3 Am2/kg 显着提高到 0.987 × 10-3 Am2/kg。这些发现将促进它们未来在光电和自旋电子器件中的应用。