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Enhanced photo activity by hole concentration on CdS surface
Chemical Physics Letters ( IF 2.8 ) Pub Date : 2020-09-08 , DOI: 10.1016/j.cplett.2020.137945
Wenhao Gu , Xiaoman Yang , Fei Teng , Zhicheng Yang , Wenjun Jiang

Confirmed by the test, the amount of the sulfur defect in CdS is simply controlled by varying the amount of acid added. The concentration of the surface hole has been influenced by the increasing of the sulfur defect. The visible light activity (λ > 420 nm) of 275-CdS (275: adding 275 μL HNO3) is about 1.39 and 1.35 times as high as that of CdS and 400-CdS (400: adding 400 μL HNO3), respectively. The increased concentration of the hole on catalyst surface is the main reason for the improved degradation performance.



中文翻译:

通过CdS表面上的空穴聚集增强光敏性

通过测试证实,只需改变添加的酸量即可控制CdS中硫缺陷的量。表面孔的浓度已受硫缺陷增加的影响。可见光活性的275-CDS(λ> 420nm的)(275:加入275μLHNO 3)为约1.39和1.35倍那样高的CdS和400的CdS:(400加入400μLHNO 3分别地), 。孔在催化剂表面上的浓度增加是改善降解性能的主要原因。

更新日期:2020-09-12
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