Abstract

The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material.

中文翻译：

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硅上形貌发展的InGaN纳米结构的合成：衬底温度对形貌和光学性质的影响

摘要

这项研究涉及的问题是分子束外延生长在Si（111）表面的形态分支的InGaN纳米结构的形态特征和光学特性如何取决于衬底温度。结果表明，随着衬底温度的升高，在生长初期形成的InGaN纳米柱的高度增加。另外，InGaN纳米结构的生长温度的增加导致这种结构的光致发光光谱的强度增加，并且积分的光致发光强度对激发功率密度的依赖性是线性的。这些事实表明，该结构为光学应用提供了希望，特别是基于统一的材料创建白色发光二极管。