Abstract

It is known that diamond-like carbon layers consist of carbon components with sp² (graphite) and sp³ (diamond) hybridizations of electron orbitals. The quantitative ratio between sp² and sp³ components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp²- and sp³-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp³ component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

中文翻译：

---

PECVD类金刚石薄膜中sp 2-与sp 3-杂化碳组分之比的改变

摘要

已知类金刚石碳层由具有电子轨道的sp ²（石墨）和sp ³（金刚石）杂化的碳组分组成。sp ²和sp ³组分之间的定量比对薄膜的结构，形态，光学，电学和机械性能产生深远影响。在这项研究中，分析了控制通过等离子体增强化学气相沉积法在单晶硅和金刚石基底上生成的类金刚石薄膜中sp ^2-和sp ^3-杂化碳含量的可能性。原位控制方法通过在膜的制造过程中直接改变电容性和电感性耦合放电的功率来改变sp ³成分，并说明了利用热退火和施加电场的非原位方法。