Abstract

The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical etching installation and overgrown by organometallic vapor-phase epitaxy under reduced pressure in a reactor.

中文翻译：

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非平面衬底上GaAs气相外延的特征

摘要

研究了GaAs外延层表面形状的特征，该GaAs外延层生长在几微米宽，垂直壁长宽比接近于1的沟槽上。所述凹槽在等离子体化学蚀刻设备中形成在GaAs晶片的表面上，并且在反应器中在减压下被有机金属气相外延生长。