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Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range
Semiconductors ( IF 0.6 ) Pub Date : 2020-09-08 , DOI: 10.1134/s1063782620090249
V. V. Rumyantsev , K. V. Maremyanin , A. A. Razova , S. M. Sergeev , N. N. Mikhailov , S. A. Dvoretskii , V. I. Gavrilenko , S. V. Morozov

Abstract

The photoresponse is investigated in the frequency range of 0.15–15 THz in HgCdTe epitaxial layers with a cadmium concentration from 15.2 to 19.2% grown by molecular-beam epitaxy. It is shown that narrow-gap and gapless HgCdTe solid solutions can be used as detectors of both terahertz and sub-terahertz radiation with a characteristic response time of 2–4 ns and with a sensitivity approaching n-InSb-based detectors widely used in this range.



中文翻译:

太赫兹和亚太赫兹范围内的窄间隙和无间隙HgCdTe固溶体的光敏性研究

摘要

在HgCdTe外延层中的0.15–15 THz频率范围内,通过分子束外延生长镉浓度为15.2%至19.2%的光响应。结果表明,窄间隙和无间隙HgCdTe固溶体可以用作太赫兹和亚太赫兹辐射的检测器,其特征响应时间为2-4 ns,灵敏度接近n -InSb基检测器范围。

更新日期:2020-09-08
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