Abstract

The change in the carrier mobility in GaAs structures after irradiation is numerically simulated. For each investigated scattering potential, the model parameters are determined at which the calculation data are consistent with the results of the experiment. It is shown for the first time that the form of the potential of scattering at radiation-induced defects determines the time and space dynamics of the velocity overshoot in short structures.

中文翻译：

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GaAs结构中的辐射诱发缺陷散射势对载流子传输的影响

摘要

数值模拟了辐照后GaAs结构中载流子迁移率的变化。对于每个调查的散射势，确定模型参数，在该模型参数下，计算数据与实验结果一致。首次表明，在辐射诱发的缺陷处，散射势的形式决定了短结构中速度超调的时间和空间动力学。