The dissolution of substrate and growth behavior of diversified IMCs at the liquid Al/solid Cu interface were in-situ observed through synchrotron radiography. The formation and growth characteristics of diversified layers at the interface were investigated, and the difference between the critical thicknesses of growing layers before new IMCs formation was determined. The primary IMCs formation during holding or solidification was achieved by controlling the Al amount and holding time. Three IMCs, ε₂, γ₁ and β, formed sequentially at the interface during reactive diffusion, following by η₂ and θ IMCs during solidification. The primary phase and IMCs formation sequence during diffusion reaction were effectively predicted from the driving force and consistent with the in-situ observation. The growth of ε₂ layer at the early stage and γ₁ layer were dominated by chemical reaction, while the limited atoms diffusion based on a multiphase growth model resulted in the ε₂ and β growth deviating from a linear relationship. In addition, a larger concentration range of the lately formed phase and a smaller concentration range of the growing phase preferred an increasing critical thickness.

通过同步辐射照相原位观察了在铝/固态铜界面上基质的溶解和多种IMC的生长行为。研究了界面处多样化层的形成和生长特性，并确定了在新的IMC形成之前生长层的临界厚度之间的差异。通过控制铝量和保持时间，可以在保持或固化过程中形成主要的IMC。三层的IMC，ε ₂，γ ₁和β，在反应性扩散过程中，接口依次形成，通过以下η ₂和θ固化期间的IMC。从驱动力可以有效地预测扩散反应过程中的初级相和IMCs形成顺序，并与原位观察结果一致。的生长ε ₂层在早期阶段和γ ₁层是由化学反应占主导地位，而基于多相生长模型的有限原子扩散导致ε ₂和β的生长从线性关系偏离。此外，较晚形成的相的较大的浓度范围和生长相的较小的浓度范围优选增加临界厚度。