The analog/radiofrequency (RF) performance of a strained-silicon (s-Si) graded-channel dual-material double gate (GC-DMDG) metal–oxide–semiconductor field-effect transistor (MOSFET) with interface charges is investigated by using Sentaurus technology computer-aided design (TCAD) software. The analog/RF figures of merit of the proposed s-Si GC-DMDG MOSFET, including the intrinsic voltage gain, transconductance generation factor, early voltage, unity-current gain frequency (\(f_{\rm t}\)), transconductance–frequency product (TFP), gain–frequency product (GFP), and gain–transconductance–frequency product (GTFP), are evaluated for different values of device parameters such as the strain in the silicon, the interface charge density, and the thicknesses of the oxide and substrate layers. The simulation results exhibit that the proposed s-Si GC-DMDG MOSFET device attains lower values of transconductance and output conductance and a higher value of early voltage compared with the s-Si graded-channel double-gate (GC-DG) MOSFET. Besides, the proposed s-Si GC-DMDG MOSFET device provides better performance in terms of \(f_{\rm t}\), TFP, GFP, and GTFP in comparison with the s-Si GC-DG MOSFET in the strong inversion region, and vice versa in the subthreshold region.

通过使用以下方法研究了带有界面电荷的应变硅（s-Si）渐变沟道双材料双栅极（GC-DMDG）金属氧化物半导体场效应晶体管（MOSFET）的模拟/射频（RF）性能Sentaurus技术计算机辅助设计（TCAD）软件。拟议中的s-Si GC-DMDG MOSFET的模拟/射频品质因数，包括固有电压增益，跨导生成因子，早期电压，单位电流增益频率（\（f _ {\ rm t} \）），跨导频率积（TFP），增益-频率积（GFP）和增益-跨导频率积（GTFP），针对不同的器件参数值（例如硅中的应变，界面电荷密度，以及氧化物和衬底层的厚度。仿真结果表明，与s-Si梯度沟道双栅（GC-DG）MOSFET相比，所建议的s-Si GC-DMDG MOSFET器件具有更低的跨导和输出电导值以及更高的早期电压值。此外，与s-Si GC-DG MOSFET相比，所建议的s-Si GC-DMDG MOSFET器件在强反转方面在\（f _ {\ rm t} \），TFP，GFP和GTFP方面具有更好的性能。区域，反之亦然。