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Extended L-band monolithically tunable InAs/InP quantum-dash multimode laser with integrated amplifier
Optical Engineering ( IF 1.3 ) Pub Date : 2020-09-07 , DOI: 10.1117/1.oe.59.9.096102
Emad Alkhazraji 1 , Mohd Sharizal Alias 2 , Khurram Karim Qureshi 3 , Mohammed Zahed Mustafa Khan 1
Affiliation  

Abstract. A two-sectioned InAs/InP quantum dash laser structure is proposed and investigated as a monolithic broadband multimodal tunable laser with an integrated semiconductor optical amplifier. The optical power-injection current and spectral characteristics of the device at different operating conditions demonstrated a total wavelength tunability of ∼15.8 nm in the extended-L-band (∼1615 to ∼1630.8 nm) window with ∼2.0 times −3 dB bandwidth enhancement. Furthermore, due to the unique tunability mechanism of forward biasing the amplifier section, the device exhibits simultaneous wavelength tuning as well as optical amplification features, with an estimated gain of ∼8.5 dB affirmed by an increase in the wall-plug efficiency up to 6.8% from 3.9%, shown by its single-section counterpart. This demonstration paves a potential platform for the deployment of broadband quantum-dash laser-amplifiers as unified light sources in next-generation optical access networks.

中文翻译:

具有集成放大器的扩展 L 波段单片可调谐 InAs/InP 量子冲刺多模激光器

摘要。提出并研究了两段 InAs/InP 量子破折号激光器结构,作为具有集成半导体光放大器的单片宽带多模可调谐激光器。该器件在不同工作条件下的光功率注入电流和光谱特性表明,在扩展的 L 波段(~1615 至~1630.8 nm)窗口中总波长可调性为~15.8 nm,带宽增强~2.0 倍 -3 dB . 此外,由于放大器部分前向偏置的独特可调机制,该器件表现出同时波长调谐和光放大特性,估计增益约为 8.5 dB,墙插效率提高高达 6.8%从 3.9%,由其单节对应物显示。
更新日期:2020-09-07
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