This work presents a behavior-based memristor model for the simulation of novel digital logic architectures. This model exhibits the nonvolatile hard switching current–voltage curves of the experimentally realized memristors. Because the model is implemented via the widely available traditional SPICE (Simulation Program with Integrated Circuit Emphasis) circuit components, its accuracy is not dependent on still-emerging device transport theory and auxiliary variables. The memristor model is used in material implication (IMPLY) gates to perform both combinational and sequential logics. As IMPLY gates exhibit the complete functionality required for digital logic, this work presents a simple realistic memristor model for use in the simulation of novel digital logic architectures.

中文翻译：

---

用于数字逻辑应用的 TiO2 忆阻器的 SPICE 行为建模

这项工作提出了一种基于行为的忆阻器模型，用于模拟新型数字逻辑架构。该模型展示了实验实现的忆阻器的非易失性硬开关电流-电压曲线。由于该模型是通过广泛使用的传统 SPICE（具有集成电路重点的仿真程序）电路组件实现的，因此其准确性不依赖于仍然新兴的设备传输理论和辅助变量。忆阻器模型用于材料蕴涵 (IMPLY) 门以执行组合逻辑和时序逻辑。由于 IMPLY 门展示了数字逻辑所需的完整功能，这项工作提出了一个简单的现实忆阻器模型，用于模拟新型数字逻辑架构。