A low-inductive half-bridge and gate driver package with on-package gate and dc-link capacitors is realized by printed circuit board (PCB) embedding of two GaN-on-Si ICs. While monolithic half-bridge and driver integration reduces on-chip parasitics, it does not solve the interconnection challenge to external capacitors. This letter solves this issue through advantageous combination of PCB embedding and monolithic circuit integration. This letter uses GaN-on-Si power circuits with integrated gate drivers, freewheeling diodes, and temperature and current sensors. GaN ICs are fabricated with thick copper on both sides, which makes them applicable to commercial PCB-embedding technologies. Thermal aspects are discussed and electromagnetic simulations used to compare the PCB-embedded package to a bond wire based package. A PCB-embedded dc–dc converter is operated up to 350 V and 450 W with up to 98.7% efficiency. 380 V hard-switching transitions show below 8% over- and undershoot despite over 120 V/ns slew rates. Parallel platelike placement of silicon flip-chip capacitors above the gate driver final stage transistors and separated only by a thin PCB layer increased the gate-loop parasitic inductance by only 40 pH.

中文翻译：

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PCB 嵌入式 GaN-on-Si 半桥和驱动器 IC，具有封装上栅极和 DC-Link 电容器

具有封装上栅极和直流链路电容器的低电感半桥和栅极驱动器封装是通过嵌入两个 GaN-on-Si IC 的印刷电路板 (PCB) 实现的。虽然单片半桥和驱动器集成减少了片上寄生效应，但它并没有解决外部电容器的互连挑战。这封信通过PCB嵌入和单片电路集成的有利组合解决了这个问题。这封信使用具有集成栅极驱动器、续流二极管以及温度和电流传感器的 GaN-on-Si 电源电路。GaN IC 的两面都用厚铜制造，这使得它们适用于商业 PCB 嵌入技术。讨论了热方面，并使用电磁模拟来比较 PCB 嵌入式封装与基于键合线的封装。PCB 嵌入式 DC-DC 转换器的工作电压高达 350 V 和 450 W，效率高达 98.7%。尽管压摆率超过 120 V/ns，但 380 V 硬开关转换显示出低于 8% 的过冲和下冲。将硅倒装芯片电容器平行放置在栅极驱动器末级晶体管上方并仅由薄 PCB 层隔开，使栅极回路寄生电感仅增加了 40 pH。