Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method.

中文翻译：

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使用栅极电荷持续时间监测多芯片 IGBT 模块的键合线疲劳


监控有缺陷的多芯片绝缘栅双极晶体管 (IGBT) 模块是提高客户服务质量的一种经济有效的方法。提出了一种利用栅极电荷持续时间的方法来监测模块处于关断状态时多芯片 IGBT 模块的键合线疲劳。它基于以下事实：由于键合线疲劳导致芯片分支失效，从而改变了多芯片 IGBT 模块的栅极输入电容。键合线的健康状态可以转化为在恒定栅极电流下栅极电荷持续时间的变化。提出了一种包含恒流源的驱动器。研究结果表明，当芯片支路发生故障时，栅极电荷的持续时间明显缩短，并且在特定的栅极电压范围内可以忽略结温的影响。可以在多芯片模块的关闭状态期间实施状态监测，并且无需考虑结温的影响。进行验证性实验验证所提方法的正确性。