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Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020)
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2020-09-07 , DOI: 10.1002/aelm.202070036 Long Cheng , Jiancong Li , Hao‐Xuan Zheng , Peng Yuan , Jiahao Yin , Ling Yang , Qing Luo , Yi Li , Hangbing Lv , Ting‐Chang Chang , Xiangshui Miao
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2020-09-07 , DOI: 10.1002/aelm.202070036 Long Cheng , Jiancong Li , Hao‐Xuan Zheng , Peng Yuan , Jiahao Yin , Ling Yang , Qing Luo , Yi Li , Hangbing Lv , Ting‐Chang Chang , Xiangshui Miao
An efficient method to calculate the Hamming weight (HW) of a binary string in a memristive array is proposed by Yi Li, Xiangshui Miao, and co‐workers in article number 2000457. The in‐memory HW calculation is implemented by a binary matrix multiplication or AND logic operation, the result of which is read out through a current accumulation operation. This work is a showcase of efficient memristive computing.
中文翻译:
忆阻器:1T1R忆阻阵列中的存储器内Hamming权重计算(Adv。Electron Mater。9/2020)
李力,苗向水和同事在文章编号2000457中提出了一种有效的方法来计算忆阻阵列中的二进制字符串的汉明权重(HW)。使用二进制矩阵乘法实现内存中硬件的计算或“与”逻辑运算,其结果通过电流累加运算读出。这项工作展示了高效的忆阻计算。
更新日期:2020-09-08
中文翻译:
忆阻器:1T1R忆阻阵列中的存储器内Hamming权重计算(Adv。Electron Mater。9/2020)
李力,苗向水和同事在文章编号2000457中提出了一种有效的方法来计算忆阻阵列中的二进制字符串的汉明权重(HW)。使用二进制矩阵乘法实现内存中硬件的计算或“与”逻辑运算,其结果通过电流累加运算读出。这项工作展示了高效的忆阻计算。