Advancement in technology has resulted in transistors scaling down to nanometers. The evolution has resulted in investigations which extend to the structure of nanometer devices and the theories related to them. The extent of the investigation has stepped into Single-walled carbon nanotube field effect transistor (SW-CNTFET). The numerical method of self-consistent 3D Poisson and Schrödinger equations is solved by the Leibmann's iteration method. Further, study the effect of illumination on different parameters including the surface potential, drain current, mobility, transconductance and sub-threshold of n-type SW- CNTFET with high-k gate dielectric constant. Finding is that the use of Hfo₂ high-k dielectric enhances the device characteristics. Comparing the drain current in illumination and dark condition, there is a notable increase when illuminated. The simulated results of proposed CNTFET photo detector were compared with existing MOSFET photo detector. Better drain current, transconductance and cut off frequency were obtained for the CNTFET. This result is in very much agreement with results obtained from numerical simulations. These findings on optical properties of carbon nanotubes (CNTFET) are sure to advance the fields of photo detectors, OEIC, solar cells and IC fabrications.

技术的进步导致晶体管缩小到纳米级。演化导致了对纳米器件结构及其相关理论的研究。研究范围已扩展到单壁碳纳米管场效应晶体管（SW-CNTFET）中。自洽3D Poisson和Schrödinger方程的数值方法是通过Leibmann迭代法求解的。此外，研究照明对具有高k栅极介电常数的n型SW-CNTFET的不同参数的影响，包括表面电势，漏极电流，迁移率，跨导和亚阈值。发现是使用Hfo ₂高k介电层可增强器件特性。比较在光照和黑暗条件下的漏极电流，当被照亮时会有明显的增加。将所提出的CNTFET光电探测器的仿真结果与现有的MOSFET光电探测器进行了比较。对于CNTFET，获得了更好的漏极电流，跨导和截止频率。该结果与从数值模拟获得的结果非常吻合。这些关于碳纳米管（CNTFET）光学特性的发现必将推动光电探测器，OEIC，太阳能电池和IC制造领域的发展。