Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric,ACS Applied Electronic Materials

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Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-05 , DOI: 10.1021/acsaelm.0c00444
Alessio Mancinelli ₁ , Sami Bolat ₂ , Jaemin Kim ₁ , Yaroslav E. Romanyuk ₂ , Danick Briand ₁

Affiliation

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MO_x)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zinc oxide (IZO) semiconductor utilizing a deep-ultraviolet (DUV)-enhanced curing, which enables a reduction of the annealing temperature to 200 °C. The effects of the DUV light exposure and the subsequent post-annealing parameters on the chemical composition of the IZO films have been investigated using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. The semiconductor layer has been combined with an high-k aluminum oxide/yttrium aluminum oxide (AlO_x/YAlO_x) dielectric stack to realize fully solution-processed MO_x TFTs at low temperature. The IZO/AlO_x/YAlO_x TFTs treated for 20 min DUV followed by 60 min at 200 °C exhibited I_on/I_off of >10⁸, a subthreshold slope (SS) of <100 mV dec^–1, and mobility (μ_sat) of 15.6 ± 4 cm² V^–1 s^–1. Devices realized with a reduced semiconductor curing time of 5 min DUV and 5 min at 200 °C achieved I_on/I_off of >10⁸, a SS <100 mV dec^–1, and μ_sat of 2.83 ± 1.4 cm² V^–1 s^–1. The TFTs possess high operational stability under gate bias stress, exhibiting low shifts in the threshold voltage of <1 V after 1000 s. The DUV-enhanced approach reduces the thermal budget required for the curing of solution-processed IZO semiconductors films, paving the way for its further implementation on temperature-sensitive substrates in future.

中文翻译：

深紫外增强方法用于高k AlO _x / YAlO _x介电体的IZO晶体管的低温固溶处理

对于大面积制造基于金属氧化物（MO _x）的电子设备，溶液处理是标准真空制造技术的一种有吸引力的替代方法。在这里，我们报道了一种基于溶液处理的铟锌氧化物（IZO）半导体的薄膜晶体管（TFT），该薄膜晶体管利用深紫外（DUV）增强固化技术，可将退火温度降低至200°C。使用傅立叶变换红外光谱和X射线光电子能谱研究了DUV曝光量和随后的退火后参数对IZO膜化学成分的影响。半导体层已与高k氧化铝/钇铝氧化物（AlO _x / YAlO _x）介电叠层，以实现在低温下经过完全溶液处理的MO _x TFT。经过20分钟DUV处理，然后在200°C下60分钟处理的IZO / AlO _x / YAlO _x TFT的I _on / I _off > 10 ⁸，亚阈值斜率（SS）<100 mV dec ^–1，迁移率（ μ_饱和的15.6±4厘米）² V ^-1 s ^ ^-1。在200°C下通过5分钟DUV的半导体固化时间和5分钟的半导体固化时间而实现的器件实现了I _on / I _off > 10 ⁸，SS <100 mV dec ^–1和_μsat为2.83±1.4 cm ² V ^–1 s ^–1。TFT在栅极偏置应力下具有很高的操作稳定性，在1000 s后阈值电压<1 V的偏移很小。增强DUV的方法减少了固溶处理的IZO半导体膜固化所需的热预算，为将来在温度敏感型基板上进一步实施铺平了道路。

更新日期：2020-10-28

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