High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In_1/2Nb_1/2)O₃‐0.36Pb(Mg_1/3Nb_2/3)O₃‐0.28PbTiO₃ (Mn‐PIMNT) thin films were grown on SrRuO₃‐buffered SrTiO₃ single‐crystal substrate in a wide deposition temperature range of 550‐620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current‐voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm² and low leakage current density of 2.7 × 10⁻¹⁰ A/cm². Moreover fingerprint‐type nanosized domain patterns with polydomain structures and well‐defined macroscopic piezoelectric properties with a high normalized strain constant of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn‐PIMNT thin films very promising in piezoelectric MEMS applications.

中文翻译：

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高居里点菱形Mn-Pb（In1 / 2Nb1 / 2）O3-Pb（Mg1 / 3Nb2 / 3）O3-PbTiO3薄膜的生长和电性能

高质量三元弛豫铁电（100）取向的Mn掺杂0.36Pb（In _1/2 Nb _1/2）O ₃ ‐0.36Pb（Mg _1/3 Nb _2/3）O ₃ ‐0.28PbTiO ₃（Mn- PIMNT）薄膜在SrRuO ₃缓冲的SrTiO ₃上生长使用脉冲激光沉积方法在550-620°C的宽沉积温度范围内形成单晶衬底。研究了相结构，铁电，介电，压电特性和纳米级畴演化。在620°C的沉积温度下，铁电磁滞回线和电流-电压曲线表明，该膜具有34.5μC/ cm ^2的剩余铁电极化显着增强和2.7×10 ^-10  A / cm ^2的低漏电流密度。此外，具有多畴结构和良好定义的宏观压电性质且具有高归一化应变常数的指纹型纳米畴图案获得40 pm / V。在原位直流电场作用下，研究了畴的演化，并通过压电力显微镜观察了180°畴的反转。这些全局电特性使当前的Mn-PIMNT薄膜在压电MEMS应用中非常有前途。