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Application of Hydrosilane-Free Atmospheric Pressure Chemical Vapor Deposition of SiOx Films in the Manufacture of Crystalline Silicon Solar Cells
Thin Solid Films ( IF 2.0 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.tsf.2020.138338
Esmail Issa , Henning Nagel , Jonas Bartsch , Markus Glatthaar , Edda Rädlein

Abstract In this work we present SiOx films deposited in cost-effective laboratory scale three-dimensional printed atmospheric pressure chemical vapor deposition setup. As SiOx films are deposited at room temperature without complex vacuum systems, they can be a good candidate for the use in commercial c-Si solar cell production lines. The quality of the deposited films was investigated as to their integrity, conformity with various surfaces, and post-treatment resilience such as stability against etchants and annealing. Several applications of the SiOx film prepared with the atmospheric pressure chemical vapor deposition (APCVD) were discussed. In one application, the APCVD SiOx was utilized to effectively promote single-side texturing of Float Zone and Czochralski Si wafers by coating only one side with SiOx and subsequently annealing prior to texturing in an alkaline aqueous solution. Another application was to exploit the APCVD SiOx as a plating mask for silicon heterojunction solar cells. Two processing options prior to the oxide-film deposition were investigated: i) application of an Ag seed-layer, which promotes subsequent electroplating, and ii) printing of an organic grid, which, after stripping, creates openings in the SiOx that facilitate electroplating of the solar cell's electrode on the underlying transparent conducting oxide. In a different application, the APCVD SiOx films acted as protection against parasitic plating on the front side of passivated emitter and rear solar cells. The deposited films were characterized by ellipsometry, hemispherical reflectance measurements, scanning electron microscopy, energy dispersive X-ray spectroscopy and optical microscopy.

中文翻译:

无氢硅烷常压化学气相沉积SiOx薄膜在晶体硅太阳能电池制造中的应用

摘要 在这项工作中,我们展示了在具有成本效益的实验室规模的三维印刷大气压化学气相沉积装置中沉积的 SiOx 薄膜。由于 SiOx 薄膜是在室温下沉积而无需复杂的真空系统,因此它们非常适合用于商业 c-Si 太阳能电池生产线。对沉积膜的质量进行了研究,包括其完整性、与各种表面的一致性以及后处理弹性,例如对蚀刻剂和退火的稳定性。讨论了用大气压化学气相沉积 (APCVD) 制备的 SiOx 薄膜的几种应用。在一个应用程序中,APCVD SiOx 用于通过仅在一侧涂覆 SiOx 并随后在碱性水溶液中进行纹理化之前进行退火来有效促进浮区和直拉硅晶片的单面纹理化。另一个应用是利用 APCVD SiOx 作为硅异质结太阳能电池的电镀掩模。研究了氧化膜沉积之前的两种处理选择:i) 应用 Ag 种子层,促进后续电镀,以及 ii) 印刷有机网格,在剥离后,在 SiOx 中创建开口,促进电镀下层透明导电氧化物上的太阳能电池电极。在不同的应用中,APCVD SiOx 薄膜起到保护钝化发射极和背面太阳能电池正面寄生电镀的作用。
更新日期:2020-11-01
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