Abstract The silicene/La2O3 heterojunctions envision promising applications in novel integrated functional nanodevices. The electronic properties of silicene, La2O3, and silicene/La2O3 heterojunctions are investigated by first-principles calculations. The silicene/La-terminated La2O3 heterojunction presents a 1.753 eV band gap, which is desired for silicene-based semiconductor devices. The effects of biaxial strain and external electric field are studied for the band structure of silicene/La2O3 heterojunction. The band gap values of silicene/La2O3 heterojunction could be effectively modulated. These findings indicate the potential application prospects of silicene-based field effect transistor with La2O3 gate dielectric in nanoscale devices.

中文翻译：

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具有超薄高碲 La2O3 栅极电介质的硅基异质结的可调电子特性

摘要 硅烯/La2O3 异质结在新型集成功能纳米器件中具有广阔的应用前景。通过第一性原理计算研究了硅烯、La2O3 和硅烯/La2O3 异质结的电子性质。硅烯/La 封端的 La2O3 异质结具有 1.753 eV 的带隙，这是基于硅烯的半导体器件所需要的。研究了双轴应变和外电场对硅烯/La2O3异质结能带结构的影响。可以有效地调节硅烯/La2O3 异质结的带隙值。这些发现表明了具有 La2O3 栅极电介质的硅基场效应晶体管在纳米器件中的潜在应用前景。