Abstract In this paper, we discuss the details of growth of CuSbSe2 chalcostibite thin films via pulsed laser deposition using bulk ball milled compound. Thin film growth conditions, in particular pulsed laser energy was optimized to obtain the near stoichiometric thin films. Films were grown at room temperature as well as at 400 °C and as grown films were post annealed at 400 °C to see annealed induced effects. Material characteristics of the thin films were evaluated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, UV–Vis–NIR spectroscopy and Raman spectroscopy studies. Scanning electron microscopy and dynamic force microscope measurements revealed the morphology as well as smoothness of the thin films. Hall coefficient values measured positive and carrier concentration value of 1.2 × 1018 cm−3 for the films grown at 400 °C. Absorption coefficient values of the order of ~105 cm−1 in the entire visible region and band gap of ~1.2 eV observed infer favorable photovoltaic characteristics.

中文翻译：

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通过脉冲激光沉积法从块状源材料生长 CuSbSe2 薄膜的研究

摘要 在本文中，我们讨论了使用块状球磨化合物通过脉冲激光沉积生长 CuSbSe2 辉铜矿薄膜的细节。薄膜生长条件，特别是脉冲激光能量被优化以获得接近化学计量的薄膜。薄膜在室温和 400°C 下生长，生长的薄膜在 400°C 下进行后退火以观察退火诱导效果。使用 X 射线衍射、X 射线光电子能谱、UV-Vis-NIR 光谱和拉曼光谱研究详细评估了薄膜的材料特性。扫描电子显微镜和动态力显微镜测量揭示了薄膜的形态和光滑度。对于在 400 °C 下生长的薄膜，霍尔系数值测量为正值，载流子浓度值为 1.2 × 1018 cm-3。