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Low-temperature synthesis of copper conductivity film from a copper formate amine complex with a low boiling point
Materials Science and Engineering: B ( IF 3.9 ) Pub Date : 2020-09-06 , DOI: 10.1016/j.mseb.2020.114743
Akihiro Yabuki , Sayuri Kawahara , Soonchul Kang , Indra Wahyudhin Fathona

A low-temperature synthesis of copper conductive film was conducted at the near-decomposition-onset temperature of copper formate-amine complex inks. Amines with a low boiling point (butylamine (b.p. 78 °C), pentylamine (b.p. 104 °C), and hexylamine (b.p. 132 °C)) were mixed with copper formate to prepare the complex inks, followed by calcination at various temperatures. The copper film calcined from copper-pentylamine complex ink showed the lowest level of resistivity. The optimal molar ratio for the conversion of pentylamine to copper formate was set at 2.4. That ratio resulted in a volume resistivity of 5.7 µΩ cm following calcination at 110 °C. The composition of the copper film was dominated by three sizes of nanoparticles, which were generated via a two-step formation of nanoparticles.



中文翻译:

低沸点甲酸铜胺络合物的低温合成铜导电膜

在甲酸铜-胺复合油墨的接近分解开始温度下进行铜导电膜的低温合成。将低沸点的胺(丁胺(bp 78°C),戊胺(bp 104°C)和己胺(bp 132°C))与甲酸铜混合制备复合油墨,然后在不同温度下煅烧。由铜-戊胺复合油墨煅烧的铜膜的电阻率最低。将戊胺转化为甲酸铜的最佳摩尔比设定为2.4。该比率导致在110°C下煅烧后的体积电阻率为5.7 µΩ cm。铜膜的组成主要由三种尺寸的纳米颗粒决定,它们是通过两步形成纳米颗粒而生成的。

更新日期:2020-09-07
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