This work deals with the growth of Ce³⁺ doped Gd_3−xLu_xAl_5−yGa_yO₁₂ mixed single crystals garnets by the micro-pulling down method and their development as phosphor-convertors of white LED (pc-WLED) and scintillators. In this research, the influence of combined technique of the “band-gap engineering” and “positioning of Ce³⁺ 5d-levels” in Gd_3−xLu_x Al_5−yGa_yO₁₂ single crystals at x = 0 – 1.5 and y = 2–2.5 ranges, is studied with the aim to improve the material properties such as color-rendering properties of pc-WLEDs, as well as scintillation. The luminescent, scintillation and photoconversion properties of Gd_3−xLu_xAl_5−yGa_yO₁₂:Ce crystals were investigated as a function of the Gd/Lu ratio. We reviled that Gd_3−xLu_xAl_3−2.5Ga_2−2.5O₁₂:Ce crystals at × = 1–1.5 show the best photoconversion and scintillation properties.

这项工作通过微拉方法处理了掺杂Ce ^3+的Gd _3−x Lu _x Al 5y _y Ga _y O ₁₂混合单晶石榴石的生长及其作为白光LED（pc-WLED）的荧光体转换器的发展）和闪烁体。在这项研究中，“带隙工程”和“ Ce ³⁺ 5d能级的定位”组合技术在Gd _3-x Lu _x Al _5-y Ga _y O _{12中的影响}研究了x = 0 – 1.5和y = 2 – 2.5范围内的单晶，旨在改善材料性能，例如pc-WLED的显色性能以及闪烁。研究了Gd _3-x Lu _x Al _{5 -y} Ga _y O ₁₂：Ce晶体的发光，闪烁和光转换特性随Gd / Lu比的变化。我们认为在×= 1–1.5处的Gd _3−x Lu _x Al _3−2.5 Ga _2−2.5 O ₁₂：Ce晶体显示出最佳的光转换和闪烁特性。