Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate structure. Herein, we fabricated a dual-gate vertical transistor based on graphene/MoTe₂/graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors.

由于与互补金属氧化物半导体晶体管相比，可重构场效应晶体管在实现逻辑和模拟电路功能方面潜力巨大，因此具有较少的晶体管资源，因此在过去几十年中引起了极大的关注。然而，由于其固有的平面多栅结构，传统可重构晶体管的小型化仍然是一个挑战。在这里，我们制造了基于石墨烯/ MoTe ₂的双栅垂直晶体管/石墨范德华斯异质结构，并通过改变顶部栅电极和漏电极的电压展示了可切换的n型，V型双极性和p型场效应特性。根据能带图分析，我们揭示了场效应特性的重构能力源于载流子通过界面处的栅可调势垒的不对称注入效率。我们的结果为实现可重构晶体管的器件小型化提供了一种潜在的方法。