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The incorporation of the ionization effect in organic semiconductors assists in triggering multilevel resistive memory behaviors
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2020-09-04 , DOI: 10.1039/d0qm00471e Cheng Zhang 1, 2, 3, 4, 5 , Hua Li 1, 2, 3, 4, 5 , Yanna Su 1, 2, 3, 4, 5 , Fei Yu 6, 7, 8, 9 , Chao Li 6, 7, 8, 9 , Qichun Zhang 6, 7, 8, 9, 10 , Jianmei Lu 1, 2, 3, 4, 5
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2020-09-04 , DOI: 10.1039/d0qm00471e Cheng Zhang 1, 2, 3, 4, 5 , Hua Li 1, 2, 3, 4, 5 , Yanna Su 1, 2, 3, 4, 5 , Fei Yu 6, 7, 8, 9 , Chao Li 6, 7, 8, 9 , Qichun Zhang 6, 7, 8, 9, 10 , Jianmei Lu 1, 2, 3, 4, 5
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The introduction of the ionization effect into organic small molecules could be a promising strategy for modulating their memory behaviors. Herein, two new ionic and zwitterionic D/A-conjugated small molecules (LD-IOM and LD-ZIOM) have been prepared via salification and further zwitterionization from their neutral parent structure LD, a pyridine-based molecule. Incredible blue-shifting absorptions of LD-IOM and LD-ZIOM by 44 and 88 nm, respectively, were observed as compared with LD. Molecular dynamics simulations suggest the preferential molecular packing modes of J-, Slide-H- and H-aggregations for LD, LD-IOM and LD-ZIOM, which are in good agreement with the experimental results. LD-based memory devices exhibited binary WORM-type memory performance with the probability for minor misreading, while LD-IOM and LD-ZIOM-based devices revealed upgraded ternary memory behaviors. The counterions in LD-IOM manifested an induction effect on the molecular packing orientations and caused two separate threshold voltage distributions, attributed to ion fractionation and the migration effect.
中文翻译：
在有机半导体中引入电离效应有助于触发多级电阻式存储行为
将电离效应引入有机小分子可能是调节其记忆行为的有前途的策略。本文中，通过以下方法制备了两个新的离子和两性离子D / A共轭小分子（LD-IOM和LD-ZIOM）从它们的中性母体结构LD（一种基于吡啶的分子）成盐和进一步两性离子化。与LD相比，观察到LD-IOM和LD-ZIOM的蓝移吸收分别为44和88 nm。分子动力学模拟表明，LD，LD-IOM和LD-ZIOM的J，Slide-H和H聚集的优先分子堆积模式与实验结果非常吻合。基于LD的存储设备表现出二进制WORM类型的存储性能，并有可能出现较小的误读，而基于LD-IOM和LD-ZIOM的设备则显示出升级的三元存储行为。LD-IOM中的抗衡离子表现出对分子堆积方向的感应效应，并引起了两个单独的阈值电压分布，这归因于离子分级分离和迁移效应。
更新日期：2020-09-23
中文翻译：
在有机半导体中引入电离效应有助于触发多级电阻式存储行为
将电离效应引入有机小分子可能是调节其记忆行为的有前途的策略。本文中，通过以下方法制备了两个新的离子和两性离子D / A共轭小分子（LD-IOM和LD-ZIOM）从它们的中性母体结构LD（一种基于吡啶的分子）成盐和进一步两性离子化。与LD相比，观察到LD-IOM和LD-ZIOM的蓝移吸收分别为44和88 nm。分子动力学模拟表明，LD，LD-IOM和LD-ZIOM的J，Slide-H和H聚集的优先分子堆积模式与实验结果非常吻合。基于LD的存储设备表现出二进制WORM类型的存储性能，并有可能出现较小的误读，而基于LD-IOM和LD-ZIOM的设备则显示出升级的三元存储行为。LD-IOM中的抗衡离子表现出对分子堆积方向的感应效应，并引起了两个单独的阈值电压分布，这归因于离子分级分离和迁移效应。
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