The solution-processed thin-film transistors (TFTs) have become the core requirement for the flexible and transparent electronics industry since they are fabricated using cost-effective techniques. However, the fabrication of low-dimensional TFTs by the solution-processing technique is still a challenge due to the surface contact resistance ( ρ c ). The current study introduces a controllable ρ c involving the effect of dimensions (channel width/length = W / L ) on TFTs. The ρ c was measured to be 2.04 × 10 9 µ m VA −1 when the channel length ( L ) of the TFT was 40 µ m. A substantial drop in the surface contact resistance to 1.8 × 10 8 µ m VA −1 was found with L = 5 µ m. Thus, a 91% control on ρ c was obtained when L reduced to 40 µ m from 5 µ m. Such a controllable ρ c was observed with...

中文翻译：

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由于尺寸修改，溶液处理的薄膜晶体管中的表面接触电阻可控

由于溶液处理的薄膜晶体管（TFT）是使用经济高效的技术制造的，因此它们已成为柔性和透明电子行业的核心要求。然而，由于表面接触电阻（ρc），通过溶液处理技术制造低尺寸TFT仍然是挑战。当前的研究引入了可控制的ρc，其中涉及尺寸（沟道宽度/长度= W / L）对TFT的影响。当TFT的沟道长度（L）为40μm时，测得ρc为2.04×10 9μmVA -1。当L ＝5μm时，发现表面接触电阻显着下降至1.8×108μmVA -1。因此，当L从5μm降低到40μm时，获得了对ρc的91％的控制。观察到这样的可控ρc