In this paper, we use a 3D technology computer-aided design device simulator to conduct an investigation into the impact on oxide thickness variation, based on parameters, such as threshold voltage (σ V TH ), subthreshold swing (σSS), on current (σ I ON ), off current (σ I OFF ), current ratio σ( I ON / I OFF ), transconductance (σ g m ), total gate capacitance (σ C gg ), and cut-off frequency (σ f T ), induced by Titanium nitride (TiN) metal gate/high-κ stack work-function variability (WFV) in a delta-doped layer Germanium-source vertical tunnel field-effect transistor (vTFET). We note that WFV has a substantial impact on electrical parameters as well as high frequency characteristics, in relation to gate insulator thickness variation. The distribution of V TH is nearly Gaussian for smaller metal grain sizes, whereas it appears bi-mod...

中文翻译：

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δ掺杂锗源垂直TFET的氧化物厚度变化对功函数变化引起的电学参数和高频特性的影响

在本文中，我们使用3D技术计算机辅助设计设备仿真器，基于阈值电压（σV TH），亚阈值摆幅（σSS）等参数对电流（ σI ON），截止电流（σI OFF），电流比σ（I ON / I OFF），跨导（σgm），总栅极电容（σC gg）和截止频率（σf T），由氮化钛（TiN）金属栅极/高κ堆栈功函数变异性（WFV）引起的掺杂，该掺杂层为锗掺杂层锗源垂直隧道场效应晶体管（vTFET）。我们注意到，WFV与栅极绝缘体的厚度变化有关，对电气参数以及高频特性有很大影响。对于较小的金属晶粒，V TH的分布几乎是高斯分布，而看起来是双模...