Tunnel field-effect transistors (TFETs) are strong candidates for ‘Internet of Things’ electronic devices, due to their ultra-low power consumption. In this work, we propose a novel nanoscale silicon-on-insulator double-gate ferroelectric tunneling field-effect transistor (SOI DG-FeTFET), and single-event-transient (SET) effects are investigated by means of two-dimensional technology computer-aided design simulations. In addition, we perform systematic analysis and comparison with a silicon-on-insulator double-gate ferroelectric field-effect transistor (SOI DG-FeET) . The simulation results show that the peak value of the drain transient current achieved by our DG-FeTFET is up to 2.72 × 10 –4 A at 10 MeV·cm 2 mg −1 , which is much higher than the on-state current ( I on ) ∼ 7.63 × 10 −5 A at V d = 0.5 V. Moreover, our results show that the DG-FeTFET is more susceptible to SET effects than FeFET. The results also ...

中文翻译：

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TCAD模拟在重离子诱导的纳米级铁电垂直隧穿晶体管中的单事件瞬变效应

隧道场效应晶体管（TFET）由于具有超低的功耗，因此是“物联网”电子设备的理想选择。在这项工作中，我们提出了一种新型的纳米级绝缘体上硅双栅铁电隧穿场效应晶体管（SOI DG-FeTFET），并通过二维技术计算机研究了单事件瞬态（SET）效应。辅助设计仿真。此外，我们使用绝缘体上硅双栅铁电场效应晶体管（SOI DG-FeET）进行了系统分析和比较。仿真结果表明，我们的DG-FeTFET在10 MeV·cm 2 mg -1时达到的漏极瞬态电流的峰值高达2.72×10 –4 A，远高于导通电流（I on）〜7.63×10 -5 A，V d = 0.5V。我们的结果表明，DG-FeTFET比FeFET更容易受到SET影响。结果还...