The temperature stability of high-density GaSb quantum dots grown on a Si(111) surface using solid-phase epitaxy is investigated during annealing at 450 °C. It is found that the bare silicon surface plays a critical role in the GaSb decomposition through the destruction of Sb–Ga bonds with the simultaneous formation of Sb–Si bonds. GaSb decomposition can be significantly suppressed if saturated monolayer coverage in the form of the Si(111)-(√3 × √3)-R30°-Sb surface reconstruction is preliminarily formed. This allows GaSb quantum dots to be embedded in the silicon matrix using molecular beam epitaxy at high temperature.

中文翻译：

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通过适当的表面处理抑制硅上自组装GaSb量子点的溶解

研究了在450°C退火过程中使用固相外延生长在Si（111）表面上的高密度GaSb量子点的温度稳定性。发现裸露的硅表面通过破坏Sb-Ga键和同时形成Sb-Si键在GaSb分解中起关键作用。如果预先形成Si（111）-（√3×√3）-R30°-Sb表面重构形式的饱和单层覆盖，则可以显着抑制GaSb分解。这允许使用高温下的分子束外延将GaSb量子点嵌入硅基质中。