The effect of average incorporated ion energy and impinging atomic oxygen flux on the structure and permeability of SiO x thin films by a microwave driven low-pressure discharge with additional radio frequency bias is studied by means of positron annihilation lifetime spectroscopy (PALS) and complementary analytical approaches. The film growth and structure were controlled by the particle fluxes. A correlation between the pore sizes and pore size distribution as measured by PALS and the adjusted plasma parameters was established. The corresponding barrier performance was measured by oxygen transmission rate and could be explained by the pore size distribution. The dominant pore size characteristic for dangling bonds within the SiO x -network was found to be in the range of 0.8 nm. The chemical composition and morphology were analysed by means of x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy diffuse reflectance meas...

中文翻译：

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正电子an没寿命光谱法表征等离子体沉积SiO x膜中的微孔

通过正电子ni没寿命谱（PALS）和互补分析研究了平均掺入离子能量和撞击原子氧通量对微波驱动的低压放电及附加射频偏置的SiO x薄膜的结构和磁导率的影响。方法。膜的生长和结构由颗粒通量控制。建立了通过PALS测量的孔径和孔径分布与调整后的血浆参数之间的相关性。相应的阻隔性能是通过氧气的传输速率测量的，并且可以用孔径分布来解释。发现SiO x-网络内的悬空键的主要孔径特征在0.8nm的范围内。