Conditions for the direct nitridation of the 4H-SiC(0001) surface by H 2 /N 2 treatment and resulting surface structure were investigated by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The FTIR analysis probed both Si–H stretching vibration with back-bond containing N atoms and Si–N stretching vibration on the nitrided surface, while XPS analysis revealed the formation of an NSi 3 structure with N density of ∼1 × 10 15 cm −2 . The LEED pattern for the H 2 /N 2 treated surface exhibited a ( ##IMG## [http://ej.iop.org/images/1882-0786/13/9/095506/apexabb181ieqn1.gif] {$\sqrt{3}$} × ##IMG## [http://ej.iop.org/images/1882-0786/13/9/095506/apexabb181ieqn2.gif] {$\sqrt{3}$} ) R 30° superstructure. The results indicate that H 2 /N 2 treatment produces a highly ordered H...

中文翻译：

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H 2 / N 2处理对4H-SiC（0001）表面的直接氮化

通过傅里叶变换红外光谱（FTIR），X射线光电子能谱（XPS）和低能电子衍射研究了通过H 2 / N 2处理直接氮化4H-SiC（0001）表面的条件以及所得的表面结构。 （LEED）。FTIR分析同时探测了含N原子的背键的Si–H拉伸振动和渗氮表面上的Si–N拉伸振动，而XPS分析显示形成了NSi密度约为1×10 15 cm-的NSi 3结构。 2。经H 2 / N 2处理的表面的LEED图案表现为（## IMG ## [http://ej.iop.org/images/1882-0786/13/9/095506/apexabb181ieqn1.gif] {$ \ sqrt {3} $}×## IMG ## [http://ej.iop.org/images/1882-0786/13/9/095506/apexabb181ieqn2.gif] {$ \ sqrt {3} $}）R 30°上层建筑。