Photoreflectance measurements were performed for GaAs 1− x − y N x Bi y layers in the temperature range of 20–300 K. For each sample a transition related to the band-gap was observed, which red-shifts with increasing nitrogen and bismuth content. The temperature dependencies of the band-gap were fitted by the Varshni and Bose–Einstein formulas and simulated within the band anticrossing model of the interaction between the extended band states of the GaAs and the localized states associated with nitrogen and bismuth atoms. The reduction of the band-gap was found to be ∼80–100 meV.

中文翻译：

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带隙工程用GaAs 1-x-y N x Bi y合金的温度依赖性研究：光反射和k·p建模

在20–300 K的温度范围内对GaAs 1-x-y N x Bi y层进行了光反射测量。对于每个样品，观察到与带隙有关的跃迁，其随着氮和铋含量的增加而红移。 。带隙的温度依赖性通过Varshni和Bose-Einstein公式拟合，并在GaAs扩展能带态与与氮和铋原子相关的局部态之间相互作用的能带反交叉模型中进行了模拟。带隙的减少被发现为约80–100 meV。