In this letter, we present on-silicon structures on-wafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behavior in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful EM model of the RF probes is an essential requirement. In this process, four different commercial RF probes used during measurements in the frequency bands 1–110 GHz, 140–220 GHz, 220–325 GHz, and 325–500 GHz are closely designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.

中文翻译：

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频段特定 RF 探头 EM 模型在 sub-THz 和 THz 测量中的重要性和要求高达 500 GHz

在这封信中，我们介绍了高达 500 GHz 的硅上结构晶圆上测量和全面的电磁 (EM) 仿真分析，以了解测量数据中的非理想行为。EM 仿真的执行方式使仿真设置与物理测量环境保持非常接近，在该环境中，RF 探头的忠实 EM 模型是必不可少的要求。在此过程中，在 EM 模拟器中紧密设计了在 1–110 GHz、140–220 GHz、220–325 GHz 和 325–500 GHz 频段测量期间使用的四种不同商用射频探头。我们还强调了频段特定探头模型的重要性，以深入了解亚太赫兹和太赫兹测量中遇到的问题。