Iam glad to introduce Dr. Oscar Huerta as a new TDMR Editor. Dr. Huerta is an expert on device physics, degradation, reliability, characterization, and modeling. He got his Ph.D. title for INAOE, Mexico, in 2019, with the thesis “ Charge-trapping dynamics in MOSFETs: An experimental approach with magnetic fields. ” He has seven years of experience in academia and industry, and has spent time at the Tempere University of Technology, Finland, and the University of Granada, Spain. He is currently with GlobalFoundries, Malta, NY, USA, working for the reliability team on advanced CMOS technologies.

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TDMR 编辑 Oscar Huerta 社论

我很高兴将 Oscar Huerta 博士介绍为新的 TDMR 编辑器。Huerta 博士是器件物理、退化、可靠性、表征和建模方面的专家。他获得了博士学位。2019 年获得墨西哥 INAOE 的标题，论文“MOSFET 中的电荷捕获动力学：磁场实验方法”。”他在学术界和工业界拥有七年的经验，曾在芬兰坦佩雷理工大学和西班牙格拉纳达大学工作过。他目前就职于美国纽约州马耳他的 GlobalFoundries，就职于先进 CMOS 技术的可靠性团队。