This study determines the relationship between retention and endurance reliability for a HfOx-based resistive random access memory (ReRAM). A TiN (15 nm) / HfOx (6 nm) / Ti (10 nm) / TiN (40 nm) stacked structure is fabricated and tested to verify its basic characteristics and reliability. The high resistance states (HRS) retention behavior is characterized and is found to degrade over 100x on the endured bits because there is a sequential high temperature procedure. The degradation is reduced slightly to a ~30x drop for the endured devices with one single refresh cycle. During the endurance and retention test procedures, the HRS resistance decreases because neutral oxygen vacancy filaments grow and this cannot be reversed. The I-V characteristics for endured devices are also determined. The results show that isothermal treatment causes a gradual SET and RESET process with multiple feasible states. The thermally induced filament degradation model (isolated filament vs. continuous filament) is verified by the relationship between retention and endurance reliability. Design guidance is recommended for an improvement in ReRAM reliability.

中文翻译：

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基于 HfOx 的阻变存储器耐久性与保持可靠性关系的研究

这项研究确定了基于 HfOx 的电阻式随机存取存储器 (ReRAM) 的保持力和耐久性可靠性之间的关系。制造并测试了 TiN (15 nm) / HfOx (6 nm) / Ti (10 nm) / TiN (40 nm) 堆叠结构，以验证其基本特性和可靠性。高电阻状态 (HRS) 保持行为的特征在于，由于存在连续的高温程序，因此发现其在耐用位上的性能降低了 100 倍以上。对于具有单个刷新周期的耐用设备，降级略有减少至约 30 倍的下降。在耐久性和保持力测试过程中，HRS 电阻降低，因为中性氧空位细丝生长，并且无法逆转。还确定了耐用设备的 IV 特性。结果表明，等温处理导致具有多个可行状态的渐进式SET和RESET过程。热致灯丝退化模型（隔离灯丝与连续灯丝）通过保持力和耐久性可靠性之间的关系得到验证。推荐设计指南以提高 ReRAM 的可靠性。