Temperature dependent high forward current stress induced drift of electrical parameters (current gain ( ${\beta }$ ) variations, emitter resistance (R $_{E}$ ) decrease) in polysilicon emitter bipolar transistors has been revealed. It shows that the ambient temperature surrounding the test device, i.e., the lattice temperature, plays a key role in the reliability issues of the polysilicon emitter bipolar junction transistors under high forward current stress. However, both results from technology computer-aided design (TCAD) simulation and experimental test indicate that the junction temperature only rise up to a certain extent but not very high, i.e., the widely reported self-heating effect is not the essential reason for the device damage in the case of double-polysilicon self-aligned NPN bipolar junction transistor.

中文翻译：

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高电流应力下多晶硅发射极双极晶体管的温度相关可靠性

温度相关的高正向电流应力引起的电气参数漂移（电流增益（ ${\beta }$ ) 变化，发射极电阻 (电阻 $_{E}$ ) 减少) 的多晶硅发射极双极晶体管已被揭示。结果表明，测试器件周围的环境温度，即晶格温度，对多晶硅发射极双极结型晶体管在高正向电流应力下的可靠性问题起着关键作用。然而，技术计算机辅助设计（TCAD）模拟和实验测试的结果表明，结温仅上升到一定程度，但不是很高，即广泛报道的自热效应并不是导致结温升高的根本原因。双多晶硅自对准 NPN 双极结晶体管情况下的器件损坏。