This paper presents an ultra–thin silicon oxynitride (SiO_XN_Y, 4 nm) tunneling layer, nitrogen functionalized reduced graphene oxide (NrGO, 3–5 layer) floating gate (FG) and poly (methyl methacrylate) (PMMA, 60 nm) blocking layers based Al/PMMA/NrGO/SiO_XN_Y/p–Si/Au, non–volatile flash memory (NVFM) structures. The ultra–thin SiO_XN_Yhelps in improving the interface with Si, resulting in lower gate leakage current density and considerable enhanced retention characteristics. The nitrogen engineered GO followed by reduction to NrGO under UV illumination attributes to the modification of the physiochemical properties, hence beneficial for non-volatile memory applications. The uniform, stress free and low temperature processing advocates the potential of PMMA as blocking layer for improved memory characteristics. The electrical characterizations on the fabricated Al/PMMA/NrGO/SiO_XN_Y/p–Si/Au gate stack demonstrates a memory window ( ${\delta }\text{W}$ ) of ~1.25 V @ ± 3 V and ~2.6 V @ ± 5 V, low gate leakage current density (J) ~10 nA/cm²@ −1 V, retention $\sim 3 \times 10^{11}$ sec (> 10 years with extrapolation) and endurance of more than 100 cycles.

中文翻译：

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用于非易失性闪存应用的 NrGO 浮栅/SiOXNY 隧道层堆栈

本文介绍了超薄氮氧化硅 (SiO _X N _Y , 4 nm) 隧道层、氮功能化还原氧化石墨烯 (NrGO, 3-5 层) 浮栅 (FG) 和聚甲基丙烯酸甲酯 (PMMA, 60 nm) ) 基于 Al/PMMA/NrGO/SiO _X N _Y /p–Si/Au 的阻挡层，非易失性闪存 (NVFM) 结构。超薄 SiO _X N _Y有助于改善与 Si 的界面，从而降低栅极漏电流密度和显着增强的保留特性。氮工程 GO 然后在紫外线照射下还原为 NrGO 归因于理化性质的改变，因此有利于非易失性存储器应用。均匀、无应力和低温处理促进了 PMMA 作为阻挡层的潜力，以改善存储特性。所制造的 Al/PMMA/NrGO/SiO _X N _Y /p–Si/Au 栅极堆叠的电气特性证明了一个存储器窗口（ ${\delta }\text{W}$ ) ~1.25 V @ ± 3 V 和 ~2.6 V @ ± 5 V，低栅极漏电流密度 (J) ~10 nA/cm ² @ −1 V，保留 $\sim 3 \times 10^{11}$ 秒（> 10 年外推）和超过 100 个周期的耐久性。