This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.

中文翻译：

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多指 HEMT 性能的可扩展性

这封信旨在研究栅极宽度对微波场效应晶体管 (FET) 性能的影响，以 GaAs 高电子迁移率晶体管 (HEMT) 技术为例进行研究。为了完成这项复杂的任务，我们对基于叉指式布局的七个 HEMT 的小信号等效电路元件和主要 RF 品质因数进行了全面分析。使用数学和系统方法定量和详尽地估计栅极宽度对器件性能的影响。