A novel method called the edge-triggered gate modulation method is proposed in this letter to decrease the voltage overshoot while maintaining high efficiency for high-power amplifiers (HPAs). In this method, the HPA is biased in high-efficiency mode, i.e., Class B/C, during the pulse-on period and switched to Class A on the rising/falling edge of the pulse. For verification, a pulsed HPA prototype operating in the $X$ -band with an output power of ~1 kW is fabricated. Based on the proposed method, a relative efficiency improvement of more than 23.2% compared with conventional Class A has been achieved with the voltage overshoot thoroughly suppressed under a 1‰ duty cycle.

中文翻译：

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基于边沿触发栅极调制的 X 波段高效大功率 GaN 功率放大器

在这封信中提出了一种称为边沿触发栅极调制方法的新方法，以减少电压过冲，同时保持高功率放大器 (HPA) 的高效率。在这种方法中，HPA 在脉冲开启期间偏置为高效模式，即 B/C 类，并在脉冲的上升/下降沿切换到 A 类。为了验证，制造了一个在 $X$ 波段工作的脉冲 HPA 原型，输出功率约为 1 kW。基于所提出的方法，与传统A类相比，相对效率提高了23.2%以上，并且在1‰占空比下彻底抑制了电压过冲。