This work is believed to be the first report of a single-supply quasi-enhancement-mode GaN-based monolithic microwave integrated circuit (MMIC) amplifier that operates from dc to 50 GHz. The quasi-E-mode GaN high electron mobility transistors (HEMTs) have an $f_{T}$ of 120 GHz and a positive turn-on voltage, $V_{\mathrm {gs-on}}$ , that enables an all positive-supply, regulated self-bias over threshold variation, and two-stage direct-coupled frequency response down to dc. Core to the quasi-E-mode design topology is a 237-GHz $f_{T}$ -multiplier transconductance gain stage to enhance the broad bandwidth response. The quasi-E-GaN MMIC obtains a gain of 11.4 dB at dc, 7 dB at 40 GHz, and 5.5 dB at 50 GHz. The 3-dB bandwidth is 31 GHz with return-losses $ < \!\!\!-10$ dB over the 50-GHz frequency band. The MMIC amplifier is realized in a compact $0.6\times0.5$ mm² area on a 4-mil SiC substrate. Quasi-E-mode GaN HEMT-based circuit architectures can enable high performance and functionality in a compact size, which has far-reaching implications for scalable broadband millimeter-wave radio applications.

中文翻译：

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基于 237GHz fT 乘法器的 DC-50GHz 直接耦合自偏置 50nm 准 E 模式 GaN MMIC 放大器

这项工作被认为是工作频率为 dc 至 50 GHz 的单电源准增强模式 GaN 基单片微波集成电路 (MMIC) 放大器的第一份报告。准 E 型 GaN 高电子迁移率晶体管 (HEMT) $f_{T}$ 120 GHz 和正开启电压， $V_{\mathrm {gs-on}}$ ，这可以实现全正电源、经过阈值变化的调节自偏置和低至直流的两级直接耦合频率响应。准 E 模式设计拓扑的核心是一个 237-GHz $f_{T}$ - 乘法器跨导增益级以增强宽带宽响应。准 E-GaN MMIC 在直流时获得 11.4 dB、40 GHz 时 7 dB 和 50 GHz 时 5.5 dB 的增益。3-dB 带宽为 31 GHz，带回波损耗 $ < \!\!\!-10$ 50 GHz 频段上的 dB。MMIC 放大器以紧凑的方式实现 $0.6\times0.5$ 4 密耳 SiC 衬底上的mm ²区域。基于准 E 模式 GaN HEMT 的电路架构可以在紧凑的尺寸中实现高性能和功能性，这对可扩展的宽带毫米波无线电应用具有深远的影响。