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An 18鈥31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2020-07-31 , DOI: 10.1109/lmwc.2020.3011135
Shiyong Zhang , Jianxing Xu , Penghui Zheng , Rong Wang , Xiaodong Tong

Benefited from the high breakdown voltage and low noise characteristics, GaN high-electron mobility transistors (HEMTs) can be used for manufacturing of robust low noise amplifiers (LNAs). Therefore, limiter circuits which protect the entire system are no longer necessary and systems with smaller volume can be realized. In this letter, a LNA with low noise figure (NF) and longtime survivability for high input power stress is designed and fabricated in a 100-nm GaN process. The LNA achieves a minimum NF of 0.8 dB and a flat gain of 21 ± 0.5 dB from 18 to 31 GHz. The LNA can survive in a 28-30-dBm input stress for 60 min without significant performance degradation.

中文翻译:


具有 0.8dB 最小 NF 和高鲁棒性的 18'31-GHz GaN 基 LNA



受益于高击穿电压和低噪声特性,GaN 高电子迁移率晶体管 (HEMT) 可用于制造稳健的低噪声放大器 (LNA)。因此,不再需要保护整个系统的限制器电路,并且可以实现体积更小的系统。在这封信中,采用 100 nm GaN 工艺设计和制造了一种具有低噪声系数 (NF) 和高输入功率应力长期生存能力的 LNA。 LNA 在 18 至 31 GHz 范围内实现了 0.8 dB 的最小 NF 和 21 ± 0.5 dB 的平坦增益。 LNA 可以在 28-30dBm 输入应力下工作 60 分钟,性能不会出现明显下降。
更新日期:2020-07-31
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