A 480-GHz sensor consists of signal stimulus and the transducer element as well as a subharmonic mixer in a 130-nm SiGe BiCMOS technology is reported. It features a mixer-first architecture based on down-conversion subharmonic mixer, an local oscillator (LO) chain at 240-GHz using a frequency doubler with variable-gain characterization, and a 480-GHz RF chain, making the fully integrated 480-GHz receiver possible. In a frequency range of 210–270 GHz at a maximum of 1.5-V supply offset, the LO chain has a 14-dB power-level variation, comprising with a 120-GHz frequency quadrupler, a power amplifier, and a variable frequency doubler. The proposed subharmonic receiver is driven by the RF and LO chain with a multiplier factor of 16 and 8, respectively. In this way, 480-GHz signal is generated, fed through the transducer, and hetero-mixed at subharmonic mixer. The measured output power difference is adjustable over 8 dB. Along with the intermediate frequency (IF) bandwidth of 20 GHz, the wide RF bandwidth makes it suitable for submillimetre-wave receiver-based dielectric spectroscopy applications. The chip occupies an area of 2.2 mm2 and consumes 290 mW.

中文翻译：

---

采用 130-nm SiGe BiCMOS 技术的 480-GHz 传感器，带有次谐波混频器和集成传感器

据报道，480 GHz 传感器由信号激励和换能器元件以及采用 130 纳米 SiGe BiCMOS 技术的次谐波混频器组成。它具有基于下变频次谐波混频器的混频器优先架构、使用具有可变增益特性的倍频器的 240 GHz 本地振荡器 (LO) 链和 480 GHz 射频链，使完全集成的 480- GHz 接收器可能。在 210–270 GHz 的频率范围内，最大 1.5 V 电源偏移时，LO 链具有 14 dB 的功率电平变化，包括 120 GHz 四倍频器、功率放大器和可变倍频器. 建议的分谐波接收器由乘法因子分别为 16 和 8 的 RF 和 LO 链驱动。通过这种方式，产生 480-GHz 信号，通过换能器馈送，并在次谐波混频器中进行异质混频。测得的输出功率差可在 8 dB 以上进行调整。除了 20 GHz 的中频 (IF) 带宽外，宽 RF 带宽使其适用于基于亚毫米波接收器的介电光谱应用。该芯片占地面积为 2.2 mm2，功耗为 290 mW。