Hybrid integration of two-dimensional (2D) materials holds great promise for realizing novel optoelectronic components on planar dielectric waveguides. Functional devices based on 2D layered transition metal dichalcogenides (TMDs) offer the advantages of low dark current and high speed. In this work, we propose and experimentally demonstrate a high-speed hybrid integrated PtSe₂ on silicon nitride waveguide photodetector. The light is guided in the silicon nitride channel by a structure based on the principle of bound states in the continuum (BICs). The BIC-based hybrid integration scheme offers a completely planar surface for the hybrid integration. The PtSe₂ waveguide photodetector has a responsivity of ∼12 mA/W at a bias voltage of 8 V with a dark current of 317 nA. The optical impulse response measurement yields a 3 dB bandwidth of 35 GHz, demonstrating the potential of this 2D material for high-speed optoelectronic devices.

中文翻译：

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氮化硅上用于高速光电探测器的二维连续二硒化铂的束缚态连续混合集成。

二维（2D）材料的混合集成为在平面介质波导上实现新型光电组件提供了广阔的前景。基于2D层状过渡金属二硫化碳（TMD）的功能器件具有低暗电流和高速度的优点。在这项工作中，我们提出并实验证明了氮化硅波导光电探测器上的高速混合集成PtSe ₂。通过基于连续体中的束缚态原理的结构在氮化硅通道中引导光。基于BIC的混合集成方案为混合集成提供了完全平坦的表面。PtSe ₂波导光电探测器在8 V偏置电压和317 nA暗电流下的响应度约为12 mA / W。光脉冲响应测量产生3 GHz的35 GHz带宽，证明了这种2D材料在高速光电设备中的潜力。