In this paper, the superlattice-like V₂O₅/Ge₈Sb₉₂ films are studied. Compared with Ge₈Sb₉₂ film, V₂O₅/Ge₈Sb₉₂ films have a high crystallization temperature (∼233°C), a large amorphous resistance (∼3.4×10⁷ Ω) and good data retention temperature (∼171.2°C) for ten years. The volume change rate of V₂O₅/Ge₈Sb₉₂ superlattice-like film is only 1.855% during the crystallization, which can guarantee a better contact with the electrode when it is applied in the phase-change memory. By adding of V₂O₅ interlayers, the thermal stability and reliability of Ge₈Sb₉₂ film have been greatly improved.

中文翻译：

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V ₂ O ₅ / Ge ₈ Sb ₉₂超晶格状薄膜中V ₂ O ₅中间层对热稳定性和尺寸缩放的影响

本文研究了类超​​晶格的V ₂ O ₅ / Ge ₈ Sb ₉₂薄膜。有Ge相比₈的Sb ₉₂膜，V ₂ ö ₅ /锗₈锑₉₂膜具有高的结晶温度（~233℃），大量的无定形性（~3.4×10 ⁷ Ω）和良好的数据保持温度（~171.2 °C）十年。V ₂ O ₅ / Ge ₈ Sb ₉₂的体积变化率晶化过程中，超晶格状薄膜仅占1.855％，当将其应用于相变存储器中时，可以保证与电极的更好接触。通过添加V ₂ O ₅中间层，大大提高了Ge ₈ Sb ₉₂薄膜的热稳定性和可靠性。