Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-e_ect transistors from di_erent technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-di_usion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test structures or internal device phenomena characterization. The methodologies are evaluated with simulation-based data and applied to fabricated devices. The extracted values are close to the ones obtained with other more intricate methodologies. Bias-dependent contact and channel resistances studies, bias-dependent high-frequency performance studies and contact engineering studies are enhanced and evaluated by the extracted contact resistance values.

本文描述了基于电子器件特性的直接接触电阻提取方法，并将其应用于不同技术的石墨烯场效应晶体管。该方法是对提取程序的一种有教育意义的改进，该提取程序最初是通过在某些偏置条件下利用石墨烯器件中的漂移扩散样迁移来为常规晶体管开发的。与其他可用于提取石墨烯晶体管的接触电阻的方法相比，此处使用的实际方法既不需要制造专用的测试结构，也不需要内部器件现象表征。使用基于仿真的数据对方法进行评估，并将其应用于已制造的设备。提取的值接近于其他复杂方法获得的值。