Abstract We report our investigations to eliminate the bias dependency of quantum efficiency of nBn devices based on InGaAsSb bulk alloy aimed for extended short wavelength detection. Both a p-type doped AlGaSb barrier and a p-type doped top contact layer were employed. The 9×1015cm-3 p-type doping of AlGaSb barrier slightly improves the bias dependency of quantum efficiency of nBn devices. The using of p-type doped top contact layer completely eliminated the band offset induced bias dependency of quantum efficiency and a 2.2% variation of quantum efficiency as applied reverse bias increases was discussed in terms of the effect of surface depletion region and junction depletion region.

中文翻译：

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消除用于扩展短波长红外检测的 InGaAsSb nBn 光电探测器量子效率的偏置依赖性的研究

摘要 我们报告了我们的研究，以消除基于 InGaAsSb 块状合金的 nBn 器件的量子效率的偏置依赖性，旨在扩展短波长检测。采用 p 型掺杂 AlGaSb 势垒和 p 型掺杂顶部接触层。AlGaSb 势垒的 9×1015cm-3 p 型掺杂略微改善了 nBn 器件量子效率的偏置依赖性。使用 p 型掺杂顶部接触层完全消除了量子效率的带偏移引起的偏置依赖性，并且在表面耗尽区和结耗尽区的影响方面讨论了当施加的反向偏置增加时量子效率的 2.2% 变化。