Simple and integrable MOS-only memristor emulator circuits exploiting a dynamic threshold feature of MOSFET and requiring no DC bias have been presented here. The propositions herein require no external capacitors. In these two circuit propositions of floating and grounded memristor emulators, the static power consumption is zero. Theoretical justifications of the propositions have been validated by simulations carried out on the Cadence Virtuoso-Spectre tool with 180 nm CMOS GPDK parameters. Further, the experimental verification has also been done using ALD1116 and ALD1117 MOSFETs to demonstrate the practical viability of the memristor emulators of this communication.

中文翻译：

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仅 MOS 忆阻器仿真器

简单且可集成的纯 MOS 忆阻器仿真器电路利用了 MOSFET 的动态阈值特性并且不需要直流偏置。这里的提议不需要外部电容器。在浮地和接地忆阻器仿真器的这两个电路命题中，静态功耗为零。这些命题的理论依据已通过在具有 180 nm CMOS GPDK 参数的 Cadence Virtuoso-Spectre 工具上进行的模拟得到验证。此外，还使用 ​​ALD1116 和 ALD1117 MOSFET 进行了实验验证，以证明该通信的忆阻器仿真器的实际可行性。