The present study focuses on the suitability of CdO thin films towards optoelectronic and spintronic devices through (Zn + Co) co-doping. Para to ferromagnetic transition mediated by oxygen vacancies takes place in the CdO:Zn thin films through Co doping which was acknowledged from the photoluminescence studies. Defect level peaks observed in the PL spectra at 411, 460 and 494 nm are associated with metal interstitials (Cdi, Zni, Coi), singly ionized oxygen vacancies (Vo+) and oxygen vacancies (Vo), respectively. The deep-level or trap state emission due to the ionized oxygen vacancies is observed at 521 nm. XRD analysis indicate that the undoped, Zn-doped (CdO:Zn) and (Zn + Co) co-doped CdO thin films have cubic structure with (1 1 1) plane being the preferential one. The crystallite size of pure CdO decreases with Zn-doping and with Co co-doping it increases. Cauliflower shaped nanostructures are evinced for the (Zn + Co) co-doped films. Increased optical transparency and decreased sheet resistance were observed for the (Zn + Co) co-doped films. Increased Haacke’s quality factor observed for the (Zn + Co) co-doped films confirmed their potential for optoelectronic devices.

中文翻译：

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(Zn + Co) 共掺杂 CdO 薄膜，具有改进的品质因数和铁磁排序，矩形比低，非常适合光电器件和软磁材料应用

本研究的重点是通过 (Zn + Co) 共掺杂来研究 CdO 薄膜对光电和自旋电子器件的适用性。由氧空位介导的对铁磁转变发生在 CdO:Zn 薄膜中，通过 Co 掺杂，这从光致发光研究中得到了承认。在 411、460 和 494 nm 的 PL 光谱中观察到的缺陷级峰分别与金属间隙（Cdi、Zn、Coi）、单电离氧空位 (Vo+) 和氧空位 (Vo) 相关。在 521 nm 处观察到由于电离氧空位引起的深能级或陷阱态发射。XRD 分析表明未掺杂、Zn 掺杂 (CdO:Zn) 和 (Zn + Co) 共掺杂 CdO 薄膜具有立方结构，其中 (1 1 1) 平面是优先的。纯 CdO 的晶粒尺寸随 Zn 掺杂而减小，而随 Co 共掺杂则增大。(Zn + Co) 共掺杂薄膜表现出花椰菜形状的纳米结构。对于 (Zn + Co) 共掺杂薄膜，观察到增加的光学透明度和减少的薄层电阻。在（Zn + Co）共掺杂薄膜中观察到的 Haacke 品质因数增加，证实了它们在光电器件方面的潜力。