Evolving material science and device architectures continue to drive improvements in photovoltaic solar cell performance. Herein, the synthesis and application of p‐type transparent copper–zinc–sulfide (Cu–Zn–S) nanocomposite thin films for application as a semi‐transparent back buffer layer for cadmium telluride (CdTe) photovoltaics is reported. Earth‐abundant and low‐toxicity Cu–Zn–S films are prepared at room temperature using successive ionic layer adsorption and reaction (SILAR). Transparency in the range of 500–800 nm, low resistivity, and composition‐controlled bandgap energy offer a compelling material system for high performance as an electron reflector enabling bifacial cell design. Implementing the Cu–Zn–S hole transport material (HTM) at the CdTe back contact, without intentional introduction of Cu doping, converts simulated AM1.5 sunlight to electricity at an efficiency up to 13.2%, with an average device performance of 13.0%. Intentional Cu doping yields a best efficiency of 14.3% with open‐circuit voltage (V_OC) of 848 mV and fill factor (FF) of 77.3% (average 14.1%). Our study shows the clear promise of this material for highly efficient and semi‐transparent back contact to CdTe solar cells.

中文翻译：

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连续离子层吸附和反应沉积透明Cu-Zn-S纳米复合材料作为CdTe光伏中的空穴传输材料

不断发展的材料科学和设备架构继续推动光伏太阳能电池性能的提高。本文报道了p型透明铜-锌-硫化物（Cu-Zn-S）纳米复合薄膜的合成和应用，该薄膜可用作碲化镉（CdTe）光伏电池的半透明背缓冲层。使用连续的离子层吸附和反应（SILAR）在室温下制备富含地球和低毒的Cu-Zn-S膜。500-800 nm范围内的透明性，低电阻率和受成分控制的带隙能量，提供了引人注目的材料系统，可作为高性能电子系统用作双面电池设计的反射器。在CdTe背触点处实施Cu-Zn-S空穴传输材料（HTM），而无意引入Cu掺杂，可以转换模拟的AM1。5阳光到电的效率高达13.2％，平均设备性能为13.0％。有意的铜掺杂在开路电压下的最佳效率为14.3％（V _OC）为848 mV，填充系数（FF）为77.3％（平均14.1％）。我们的研究表明，这种材料具有与CdTe太阳能电池高效且半透明的背接触的明确前景。