Abstract The effect of variation in sputtering power on the structural, morphological, compositional and electrical characteristics of Gadolinium oxide (Gd2O3) thin films deposited on Silicon (Si) substrate using RF magnetron sputtering is presented in this paper. All the deposited films were characterized using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The obtained results indicated that the crystallinity of the films increased with increase in sputtering power and the films deposited at higher power showed the lower rms roughness value. Stoichiometry of the films is closer to the ideal value at a sputtering power of 40 W and further increase in power leads to the formation of an excess concentration of oxygen within the films. Al/Gd2O3/p-Si metal-insulator-semiconductor (MOS) structures were fabricated and the performance of the devices was analyzed using capacitance-voltage (C-V) and current-voltage (J-V) studies. The minimum flat band voltage shift and lowest effective oxide charge density values were obtained from the MOS capacitor with Gd2O3 grown at 40 W power. J-V characterization suggests Schottky and Poole-Frenkel are the dominant conduction in the deposited Gd2O3 films.

中文翻译：

---

功率对MOS电容器磁控溅射氧化钆薄膜物理和电学性能的影响

摘要 本文介绍了溅射功率变化对使用射频磁控溅射沉积在硅 (Si) 衬底上的氧化钆 (Gd2O3) 薄膜的结构、形态、成分和电学特性的影响。所有沉积的薄膜都使用 X 射线衍射仪 (XRD)、原子力显微镜 (AFM) 和 X 射线光电子能谱 (XPS) 进行表征。所得结果表明薄膜的结晶度随着溅射功率的增加而增加，并且以较高功率沉积的薄膜显示出较低的均方根粗糙度值。在 40 W 的溅射功率下，薄膜的化学计量更接近理想值，功率的进一步增加导致薄膜内形成过量浓度的氧。制造了 Al/Gd2O3/p-Si 金属-绝缘体-半导体 (MOS) 结构，并使用电容-电压 (CV) 和电流-电压 (JV) 研究分析了器件的性能。最小平带电压偏移和最低有效氧化物电荷密度值是从具有 Gd2O3 以 40W 功率生长的 MOS 电容器获得的。JV 特性表明肖特基和普尔-弗伦克尔是沉积的 Gd2O3 薄膜中的主要传导。